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MJE521G Datasheet(PDF) 1 Page - ON Semiconductor |
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MJE521G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 5 1 Publication Order Number: MJE521/D MJE521 Plastic Medium−Power NPN Silicon Transistor These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to PNP MJE371 • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCB 40 Vdc Emitter Base Voltage VEB 4.0 Vdc Collector Current − Continuous − Peak IC 4.0 8.0 Adc Base Current − Continuous IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 40 0.32 W mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 3.12 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping ORDERING INFORMATION MJE521 TO−225 500 Units/Box 4 AMPERES POWER TRANSISTORS NPN SILICON 40 VOLTS, 40 WATTS http://onsemi.com MJE521G TO−225 (Pb−Free) 500 Units/Box TO−225 CASE 77 STYLE 1 2 1 3 MARKING DIAGRAM YWW JE521G Y = Year WW = Work Week JE521 = Device Code G = Pb−Free Package |
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