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BYM36BGP Datasheet(PDF) 1 Page - Gulf Semiconductor |
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BYM36BGP Datasheet(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page BYM36AGP THRU BYM36EGP SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: : : :200V to 1000V CURRENT: 3.0A FEATURE DO-201AD High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350 °C /10sec/0.375”lead length at 5 lbs tension Low leakage current Typical Ir<0.1 µA Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity: color band denotes cathode Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25 °C, unless otherwise stated) SYMBOL BYM36 AGP BYM36 BGP BYM36 CGP BYM36 DGP BYM36 EGP units Maximum Recurrent Peak Reverse Voltage Vrrm 200 400 600 800 1000 V Maximum RMS Voltage Vrms 140 280 420 560 700 V Maximum DC blocking Voltage Vdc 200 400 600 800 1000 V reverse avalanche breakdown voltage at IR = 0.1 mA V(BR)R (min) 300 500 700 900 1100 V Maximum Average Forward Rectified Current 10mm lead length at Ta =55 °C If(av) 3.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 65 A Maximum Forward Voltage at rated Forward Current and 25 °C IF=3.0A Vf 1.6 1.78 V non-repetitive peak reverse avalanche energy (Note 1) Ersm 10 mJ Maximum DC Reverse Current Ta =25 °C at rated DC blocking voltage Ta =125 °C Ir 10.0 150.0 µA µA Maximum Reverse Recovery Time (Note 2) Trr 100 150 nS Typical Junction Capacitance (Note 3) Cj 75.0 pF Typical Thermal Resistance (Note 4) Rθja 20.0 °C /W Storage and Operating Junction Temperature Tstg, Tj -65 to +175 °C Note: 1. L = 120 mH; Tj = Tj max prior to surge; inductive load switched off 2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted Rev.A1 www.gulfsemi.com |
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