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UF1200 Datasheet(PDF) 1 Page - Gulf Semiconductor |
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UF1200 Datasheet(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page Rev.A1 www.gulfsemi.com UF1200 ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE: : : :1200V CURRENT: : : : 1.0A FEATURE DO –41\DO- -- -204AL Low power loss High surge capability Glass passivated chip junction Ultra-fast recovery time for high efficiency High temperature soldering guaranteed 250℃/10sec/0.375″lead length at 5 lbs tension MECHANICAL DATA Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case:Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity:color band denotes cathode Mounting position:any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated) SYMBOL UF1200 units Maximum Recurrent Peak Reverse Voltage Vrrm 1200 V Maximum RMS Voltage Vrms 840 V Maximum DC blocking Voltage Vdc 1200 V Maximum Average Forward Rectified Current 3/8″lead length at Ta =55℃ If(av) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 30.0 A Maximum Forward Voltage at Forward current 1A Peak Vf 1.5 V Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =125°C Ir 10.0 100.0 µ A µ A Maximum Reverse Recovery Time (Note 1) Trr 100 nS Typical Junction Capacitance (Note 2) Cj 17.0 pF Typical Thermal Resistance (Note 3) R(ja) 60.0 ℃/W Storage and Operating Junction Temperature Tstg,Tj -55 to +150 ℃ Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted |
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