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TPS23756 Datasheet(PDF) 4 Page - Texas Instruments

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No. de pieza TPS23756
Descripción Electrónicos  High Power/High Efficiency PoE Interface and DC/DC Controller
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

TPS23756 Datasheet(HTML) 4 Page - Texas Instruments

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TPS23754
TPS23754-1
TPS23756
SLVS885D – OCTOBER 2008 – REVISED DECEMBER 2009
www.ti.com
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
FRS
CTL = VB, measure GATE
Switching frequency
kHz
RFRS = 68.1 kΩ
227
253
278
DMAX
Duty cycle
CTL= VB, measure GATE
76
78
80
%
VSYNC
Synchronization
Input threshold
2
2.2
2.4
V
CTL
VZDC
0% duty cycle threshold
VCTL ↓ until GATE stops
1.3
1.5
1.7
V
Softstart period
Interval from switching start to VCSMAX
1.9
3.9
6.2
ms
Input resistance
70
100
145
k
BLNK
BLNK = RTN
35
55
78
Blanking delay
ns
(In addition to t1)
RBLNK = 49.9 kΩ
38
55
70
DT
CTL = VB, CGATE = 1 nF,
CGAT2 = 1 nF, measure GATE, GAT2
tDT1
RDT = 24.9 kΩ, GAT2 ↑ to GATE ↑
40
50
62.5
Dead time
ns
tDT2
See Figure 2 for tDTx definition
RDT = 24.9 kΩ, GATE ↓ to GAT2 ↓
40
50
62.5
tDT1
RDT = 75 kΩ, GAT2 ↑ to GATE ↑
120
150
188
tDT2
RDT = 75 kΩ, GATE ↓ to GAT2 ↓
120
150
188
CS
VCSMAX
Maximum threshold voltage
VCTL = VB, VCS rising until GATE duty cycle drops
0.5
0.55
0.6
V
t1
Turnoff delay
VCS = 0.65 V
24
40
70
ns
Internal slope compensation
VSLOPE
Peak voltage at maximum duty cycle, referenced to CS
120
155
185
mV
voltage
Peak slope compensation
ISL_EX
VCTL = VB, ICS at maximum duty cycle
30
42
54
μA
current
Bias current (sourcing)
DC component of ICS
1
2.5
4.3
μA
GATE
Source current
VCTL = VB, VC = 12 V, GATE high, pulsed measurement
0.37
0.6
0.95
A
Sink current
VCTL = VB, VC = 12 V, GATE low, pulsed measurement
0.7
1.0
1.4
A
GAT2
VCTL = VB, VC = 12 V, GAT2 high, RDT = 24.9 kΩ, pulsed
Source current
0.37
0.6
0.95
A
measurement
VCTL = VB, VC = 12 V, GAT2 low, RDT = 24.9 kΩ, pulsed
Sink current
0.7
1.0
1.4
A
measurement
APD / PPD
VAPDEN
VAPD rising
1.43
1.5
1.57
APD threshold voltage
V
VAPDH
Hysteresis (2)
0.29
0.31
0.33
VPPDEN
VPPD- VVSS rising, UVLO disable
1.45
1.55
1.65
V
VPPDH
Hysteresis (2)
0.29
0.31
0.33
PPD threshold voltage
VPPD2
VPPD- VVSS rising, Class enable
7.4
8.3
9.2
V
VPPD2H
Hysteresis (2)
0.5
0.6
0.7
APD leakage current
VC = 12 V, VAPD = VB
1
μA
(source or sink)
IPPD
PPD sink current
VPPD-VSS = 1.5 V
2.5
5
7.5
μA
THERMAL SHUTDOWN
Turnoff temperature
TJ rising
135
145
155
°C
Hysteresis(3)
20
°C
(2)
The hysteresis tolerance tracks the rising threshold for a given device.
(3)
These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's product
warranty.
4
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Copyright © 2008–2009, Texas Instruments Incorporated


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