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TPCA8109 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza TPCA8109
Descripción Electrónicos  Silicon P Channel MOS Type (U-MOS??
Download  7 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8109 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TPCA8109
2009-12-03
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPCA8109
Lithium Ion Battery Applications
Power Management Switch Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate-source voltage
VGSS
−25/+20
V
DC
(Note 1)
ID
−24
Drain current
Pulsed (Note 1)
IDP
−72
A
Drain power dissipation
(Tc=25°C)
PD
30
W
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
2.8
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.6
W
Single pulse avalanche energy
(Note 3)
EAS
75
mJ
Avalanche current
IAR
−24
A
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 3, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
8
5
1
4
4.25
± 0.2
5.0
± 0.2
S
S
0.05
A
0.595
0.4
± 0.1
1
4
0.15
± 0.05
8
5
1.27
A
0.05 M
1,2,3:SOURCE
4:GATE
5,6,7,8:DRAIN
JEDEC
JEITA
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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