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TPCA8109 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPCA8109 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCA8109 2009-12-03 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS −25/+20 V DC (Note 1) ID −24 Drain current Pulsed (Note 1) IDP −72 A Drain power dissipation (Tc=25°C) PD 30 W Drain power dissipation (t = 10 s) (Note 2a) PD 2.8 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.6 W Single pulse avalanche energy (Note 3) EAS 75 mJ Avalanche current IAR −24 A Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 3, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm 8 5 1 4 4.25 ± 0.2 5.0 ± 0.2 S S 0.05 A 0.595 0.4 ± 0.1 1 4 0.15 ± 0.05 8 5 1.27 A 0.05 M 1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
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