2SD2114KW datasheet(1/4 Pages) ROHM

No. de pieza	2SD2114KW

Descripción Electrónicos	High-current Gain MediumPower Transistor (20V, 0.5A)

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Fabricante Electrónico	ROHM [Rohm]

Página de inicio	http://www.rohm.com

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1 / 4 page

(96-232-C107)

FExternal dimensions (Units: mm)

232

Transistors

High-current Gain Medium

Power Transistor (20V, 0.5A)

2SD2114K / 2SD2144S

FFeatures

1) High DC current gain.

hFE = 1200 (Typ.)

2) High emitter-base voltage.

VEBO = 12V (Min.)

3) Low VCE(sat).

VCE(sat) = 0.18V (Typ.)

(IC /IB = 500mA / 20mA)

FStructure

Epitaxial planar type

NPN silicon transistor

Número de pieza similar - 2SD2114KW

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Rohm	2SD2114K	99Kb / 5P	High-current Gain Medium Power Transistor (20V, 0.5A)
Guangdong Kexin Industr...	2SD2114K	36Kb / 1P	Power Transistor
Rohm	2SD2114K	164Kb / 4P	High-current Gain Medium Power Transistor
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	2SD2114K	96Kb / 5P	High-current Gain Medium Power Transistor (20V, 0.5A)

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Rohm	2SD2144STPU	112Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A)
	2SD2114KT146W	112Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A)
	2SD2114KT146V	112Kb / 4P	High-current Gain Medium Power Transistor (20V, 0.5A)
	2SD2114K	99Kb / 5P	High-current Gain Medium Power Transistor (20V, 0.5A)
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