FMW3 datasheet(1/1 Pages) ROHM

No. de pieza	FMW3

Descripción Electrónicos	General purpose (dual transistors)

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Fabricante Electrónico	ROHM [Rohm]

Página de inicio	http://www.rohm.com

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FMW3 / FMW4 / IMX8

Transistors

General purpose (dual transistors)

FMW3 / FMW4 / IMX8

!

!Features

1) Two 2SC3906K chips in an SMT package.

2) High breakdown voltage.

!

!Absolute maximum ratings

(Ta = 25

°C)

Parameter

Symbol

VCBO

VCEO

VEBO

IC

Pc

Tj

Tstg

Limits

120

5

50

150

−55~+150

Unit

V

mA

mW

∗

°C

300(TOTAL)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

∗ 200mW per element must not be exceeded.

!

!Package, marking, and packaging specifications

FMW3

SMT5

W3

T148

3000

FMW4

SMT5

W4

T148

3000

IMX8

SMT6

X4

T108

3000

Part No.

Package

Marking

Code

Basic ordering unit (pieces)

!

!Circuit diagrams

FMW3

FMW4

IMX8

!

!External dimensions

(Units : mm)

ROHM : SMT5

FMW3

FMW4

EIAJ : SC-74A

Each lead has same dimensions

0.3to0.6

1.6

2.8

ROHM : SMT6

IMX8

EIAJ : SC-74

Each lead has same dimensions

0.3to0.6

2.8

1.6

!

!Electrical characteristics

(Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

120

5

−

180

−

0.5

820

V

µA

−

Transition frequency

fT

−

140

−

MHz

IC

=50µA

IC

=1mA

IE

=50µA

VCB

=100V

VEB

=4V

VCE(sat)

−−

0.5

V

IC/IB

=10mA/1mA

VCE

=6V, IC=2mA

VCE

=−12V, IE=2mA, f=100MHz

∗Transition frequency of the device

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

∗

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