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KM416C10CT-L6 Datasheet(PDF) 6 Page - Samsung semiconductor

No. de pieza KM416C10CT-L6
Descripción Electrónicos  1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Download  35 Pages
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C10CT-L6 Datasheet(HTML) 6 Page - Samsung semiconductor

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KM416C1004C, KM416C1204C
CMOS DRAM
KM416V1004C, KM416V1204C
AC CHARACTERISTICS (Continued)
Parameter
Symbol
-45
-5
-6
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
tDS
0
0
0
ns
9,17
Data hold time
tDH
7
8
10
ns
9,17
Refresh period (1K, Normal)
tREF
16
16
16
ms
Refresh period (4K, Normal)
tREF
64
64
64
ms
Refresh period (L-ver)
tREF
128
128
128
ms
Write command set-up time
tWCS
0
0
0
ns
7
CAS to W delay time
tCWD
28
32
36
ns
7,13
RAS to W delay time
tRWD
59
67
79
ns
7
Column address W delay time
tAWD
37
42
49
ns
7
CAS precharge to W delay time
tCPWD
39
47
54
ns
7
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
5
ns
15
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
10
ns
16
RAS to CAS precharge time
tRPC
5
5
5
ns
Access time from CAS precharge
tCPA
25
28
35
ns
3
Hyper Page mode cycle time
tHPC
18
20
25
ns
18
Hyper Page read-modify-write cycle time
tHPRWC
39
47
56
ns
18
CAS precharge time (Hyper Page cycle)
tCP
7
8
10
ns
12
RAS pulse width (Hyper Page cycle)
tRASP
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
tRHCP
27
30
35
ns
OE access time
tOEA
13
13
15
ns
3
OE to data delay
tOED
10
13
15
ns
Output buffer turn off delay time from OE
tOEZ
3
13
3
13
3
15
ns
6
OE command hold time
tOEH
10
13
15
ns
Output data hold time
tDOH
4
5
5
ns
Output buffer turn off delay from RAS
tREZ
3
13
3
13
3
15
ns
6,19
Output buffer turn off delay from W
tWEZ
3
13
3
13
3
15
ns
6
W to data delay
tWED
15
15
15
ns
OE to CAS hold time
tOCH
5
5
5
ns
CAS hold time to OE
tCHO
5
5
5
ns
OE precharge time
tOEP
5
5
5
ns
W pulse width (Hyper Page Cycle)
tWPE
5
5
5
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
100
us
20,21,22
RAS precharge time (C-B-R self refresh)
tRPS
79
90
110
ns
20,21,22
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
-50
ns
20,21,22


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