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KM6264BLGI-10 Datasheet(PDF) 5 Page - Samsung semiconductor

No. de pieza KM6264BLGI-10
Descripción Electrónicos  8Kx8 bit Low Power CMOS Static RAM
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM6264BLGI-10 Datasheet(HTML) 5 Page - Samsung semiconductor

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KM6264B Family
ELECTRONICS
CMOS SRAM
Revision. 0.0
Auust. 1996
5
Min
70
-
-
-
5
5
0
0
10
70
60
0
60
40
0
0
30
0
5
Max
-
70
70
35
-
-
30
30
-
-
-
-
-
-
-
30
-
-
-
Min
100
-
-
-
10
5
0
0
10
100
80
0
80
60
0
0
40
0
5
Max
-
100
100
50
-
-
35
35
-
-
-
-
-
-
-
30
-
-
-
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Temperature
0~70 °C
-25~85 °C
-40~85 °C
Read
Write
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter List
Min
120
-
-
-
10
5
0
0
10
120
85
0
85
70
0
0
50
0
10
Max
-
120
120
60
-
-
40
40
-
-
-
-
-
-
-
30
-
-
-
120ns
70ns
100ns
Symbol
Units
TEST CONDITIONS (2. Temperature and Vcc Conditions)
Product Family
KM6264BL/L-L
KM6264BLE/LE-L
KM6264BLI/LI-L
Power Supply(Vcc)
5V +/- 10%
5V +/- 10%
5V +/- 10%
Comments
Commercial
Extended
Industrial
PARAMETER LIST FOR EACH SPEED BIN
Speed Bin
70/100/120ns
100*ns
100*ns
Speed Bins
* measured with 30pF test load


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