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KM681002CL-15 Datasheet(PDF) 4 Page - Samsung semiconductor

No. de pieza KM681002CL-15
Descripción Electrónicos  128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM681002CL-15 Datasheet(HTML) 4 Page - Samsung semiconductor

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KM681002C/CL, KM681002CI/CLI
CMOS SRAM
PRELIMINARY
Revision 2.0
- 4 -
March 2000
PRELIMINARY
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
KM681002C-10
KM681002C-12
KM681002C-15
KM681002C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
10
-
12
-
15
-
20
-
ns
Address Access Time
tAA
-
10
-
12
-
15
-
20
ns
Chip Select to Output
tCO
-
10
-
12
-
15
-
20
ns
Output Enable to Valid Output
tOE
-
5
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ
0
5
0
6
0
7
0
9
ns
Output Disable to High-Z Output
tOHZ
0
5
0
6
0
7
0
9
ns
Output Hold from Address
tOH
3
-
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
tPU
0
-
0
-
0
-
0
-
ns
Chip Selection to Power Down-
tPD
-
10
-
12
-
15
-
20
ns
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
DOUT
RL = 50
ZO = 50
VL = 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.


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