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KS86C4204 Datasheet(PDF) 18 Page - Samsung semiconductor |
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KS86C4204 Datasheet(HTML) 18 Page - Samsung semiconductor |
18 / 28 page ELECTRICAL DATA KS86C4204/C4208/P4208 16-10 Table 16-9. Power-on RESET Circuit Characteristics (TA = – 40 °C to + 85 °C, VDD = 3.0 V to 5.5 V) Parameter Symbol Conditions Min Typ Max Unit Power-on reset voltage high VDDH 3.0 – 5.5 V Power-on reset voltage low VDDL 0 2.6 3.0 V Power supply voltage rise time tr 10 (1) us Power supply voltage off time toff 0.5 s Power-on reset circuit IDDPR VDD = 5 V ± 10% 65 100 µA cunsumption current (2) VDD = 3.3 V 45 80 NOTES: 1. 216/fx (= 6.55 ms at fx = 10 MHz) 2. Current consumed when power-on reset circuit is provided internally. VDD VDDH VDDL toff tr Figure16-5. Power-on RESET Timing |
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