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KM736FV4021H-5 Datasheet(PDF) 5 Page - Samsung semiconductor

No. de pieza KM736FV4021H-5
Descripción Electrónicos  128Kx36 & 256Kx18 Synchronous Pipelined SRAM
Download  12 Pages
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM736FV4021H-5 Datasheet(HTML) 5 Page - Samsung semiconductor

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Rev 1.0
KM718FV4021
128Kx36 & 256Kx18 SRAM
- 5 -
KM736FV4021
Dec. 1998
DC CHARACTERISTICS
NOTE :1. Minimum cycle. IOUT=0mA.
2. 50% read cycles.
Parameter
Symbol
Min
Max
Unit
Note
Average Power Supply Operating Current-x36
(VIN=VIH or VIL, ZZ & SS=VIL)
IDD5
IDD6
IDD7
-
650
600
550
mA
1, 2
Average Power Supply Operating Current-x18
(VIN=VIH or VIL, ZZ & SS=VIL)
IDD5
IDD6
IDD7
-
600
550
500
mA
1, 2
Power Supply Standby Current
(VIN=VIH or VIL, ZZ=VIH)
ISB
-
60
mA
1
Input Leakage Current
(VIN=VSS or VDD)
ILI
-1
1
µA
Output Leakage Current
(VOUT=VSS or VDDQ, ZZ=VIH, G=VIH)
ILO
-1
1
µA
Output High Voltage(IOH=-4mA) for VDDQ=3.3V
Output High Voltage(IOH=-4mA) for VDDQ=2.5V
VOH1
VOH2
2.4
2.0
VDDQ
V
Output Low Voltage(IOL=4mA)
VOL
VSS
0.4
V
ABSOLUTE MAXIMUM RATINGS
NOTE : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Value
Unit
Note
Core Supply Voltage Relative to VSS
VDD
-0.5 to 3.9
V
Output Supply Voltage Relative to VSS
VDDQ
VDD
V
Voltage on any I/O pin Relative to VSS
VTERM
-0.5 to VDD+0.5
V
Maximum Power Dissipation
PD
3
W
Output Short-Circuit Current
IOUT
25
mA
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature
TSTG
-55 to 125
°C
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Note
Core Power Supply Voltage
VDD
3.15
3.3
3.45
V
Output Power Supply Voltage
VDDQ
2.35
2.5
3.45
V
Input High Level
VIH
1.7
-
VDD+0.3
V
Input Low Level
VIL
-0.3
-
0.7
V
PECL Clock Input High Level
VIH-PECL
2.135
-
2.420
V
PECL Clock Input Low Level
VIL-PECL
1.490
-
1.825
V
Operating Junction Temperature
TJ
10
-
110
°C


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