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2SC4065 Datasheet(PDF) 1 Page - Sanken electric |
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2SC4065 Datasheet(HTML) 1 Page - Sanken electric |
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1 / 1 page  86 2SC4065 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4065 60 60 6 ±12 3 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sAbsolute maximum ratings sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB 2SC4065 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ Unit µA mA V V V MHz PF Conditions VCB=60V VEB=6V IC=25mA VCE=1V, IC=6A IC=6A, IB=1.3A VECO=10A VCE=12V, IE=–0.5A VCB=10V, f=1MHz (Ta=25°C) (Ta=25°C) I C– V CE Characteristics (Typical) h FE– I C Characteristics (Typical) h FE– I C Temperature Characteristics (Typical) θj-a–t Characteristics I C– V BE Temperature Characteristics (Typical) V CE(sat) – I B Characteristics (Typical) Pc – T a Derating 0 0 4 2 8 6 12 10 24 6 Collector-Emitter Voltage V CE(V) I B=10mA 20mA 40mA 60mA 100mA 150mA Safe Operating Area (Single Pulse) f T– I E Characteristics (Typical) 0 1.0 1.3 0.5 0.005 0.01 0.1 3 1 Base Current I B(A) I C=1A 12A 3A 6A 9A 0.02 0.1 1 1 0 1 2 3 5 50 10 100 400 Collector Current I C(A) (V CE=1V) Typ 0.02 0.1 1 1 0 1 2 3 5 50 10 100 400 Collector Current I C(A) (V CE=1V) 0.2 0.5 1 5 1 1 0 100 1000 Time t(ms) 10 50 3 5 100 0.05 0.1 1 0.5 30 10 5 Collector-Emitter Voltage V CE(V) Without Heatsink Natural Cooling DC 100ms 1ms 40 30 20 10 2 0 0 2 5 5 0 7 5 100 125 150 Ambient Temperature Ta(˚C) Without Heatsink 50x50x2 100x100x2 150x150x2 0 12 10 2 4 8 6 0 1.1 1.0 0.5 Base-Emittor Voltage V BE(V) (V CE=1V) 25˚C –30˚C 125˚C –0.05 –0.1 –1 –0.5 –5 –12 –10 20 10 0 30 (V CE=12V) Emitter Current I E(A) Typ Natural Cooling Silicone Grease Heatsink: Aluminum in mm External Dimensions FM20(TO220F) ø3.3±0.2 10.1±0.2 2.54 2.54 1.35±0.15 0.85 +0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.2 0.45 +0.2 -0.1 BE C a b Weight : Approx 2.0g a. Type No. b. Lot No. Application : DC Motor Driver and General Purpose sTypical Switching Characteristics (Common Emitter) VCC (V) 24 RL ( Ω) 4 IC (A) 6 VBB2 (V) –5 IB2 (A) –0.12 ton ( µs) 0.6typ tstg ( µs) 1.4typ tf ( µs) 0.4typ IB1 (A) 0.12 VBB1 (V) 10 Built-in Diode at C – E Low VCE (sat) B C E (400 Ω) Equivalent circuit |
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