BUK9516-75B datasheet(2/15 Pages) NXP

No. de pieza	BUK9516-75B

Descripción Electrónicos	TrenchMOS logic level FET

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Philips Semiconductors

BUK95/9616-75B

TrenchMOS™ logic level FET

Product data

Rev. 01 — 23 April 2003

2 of 15

9397 750 11246

3.

Limiting values

Table 2:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

-

75

V

VDGR

drain-gate voltage (DC)

RGS =20kΩ

-75

V

VGS

gate-source voltage (DC)

-

±15

V

ID

drain current (DC)

Tmb =25 °C; VGS =5V;

Figure 2 and 3

-67

A

Tmb = 100 °C; VGS =5V; Figure 2

-47

A

IDM

peak drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs;

Figure 3

-

270

A

Ptot

total power dissipation

Tmb =25 °C; Figure 1

-

157

W

Tstg

storage temperature

−55

+175

°C

Tj

junction temperature

−55

+175

°C

Source-drain diode

IDR

reverse drain current (DC)

Tmb =25 °C

-

67

A

IDRM

peak reverse drain current

Tmb =25 °C; pulsed; tp ≤ 10 µs

-

270

A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source avalanche

energy

unclamped inductive load; ID =67A;

VDS ≤ 75 V; VGS =5V; RGS =50 Ω;

starting Tmb =25 °C

-

140

mJ

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