Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
BUK7607-30B Datasheet(PDF) 9 Page - NXP Semiconductors |
|
BUK7607-30B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page Philips Semiconductors BUK75/7607-30B TrenchMOS™ standard level FET Product data Rev. 01 — 07 April 2003 9 of 15 9397 750 11232 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. VGS =0V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 03nm87 0 25 50 75 100 02 46 8 VGS (V) ID (A) Tj = 175 °C Tj = 25 °C 03nm85 0 2 4 6 8 10 0 1020 3040 QG (nC) VGS (V) VDD = 24 V VDD = 14 V 03nm84 0 25 50 75 100 0.0 0.4 0.8 1.2 VSD (V) IS (A) Tj = 175 °C Tj = 25 °C |
Número de pieza similar - BUK7607-30B |
|
Descripción similar - BUK7607-30B |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |