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BUK754R3-75C Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK754R3-75C Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet I TrenchMOS technology I Q101 compliant I 175 °C rated I Standard level compatible I Automotive systems I General purpose power switching I Motors, lamps and solenoids I 12 V, 24 V and 42 V loads I EDS(AL)S ≤ 630 mJ I RDSon = 3.7 mΩ (typ) I ID ≤ 100 A I Ptot ≤ 333 W Table 1. Pinning Pin Description Simplified outline Symbol 1 gate (G) SOT78 (TO-220AB) SOT226 (I2PAK) 2 drain (D) 3 source (S) mb mounting base; connected to drain 12 mb 3 3 2 1 mb S D G mbb076 |
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