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BUK7613-75B Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza BUK7613-75B
Descripción Electrónicos  TrenchMOS standard level FET
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

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Philips Semiconductors
BUK75/7613-75B
TrenchMOS™ standard level FET
Product data
Rev. 01 — 14 April 2003
4 of 15
9397 750 11237
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4.
Thermal characteristics
4.1 Transient thermal impedance
Table 3:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ Max Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
Figure 4
-
-
0.95 K/W
Rth(j-a)
thermal resistance from junction to
ambient
SOT78 (TO-220AB)
vertical in still air
-
60
-
K/W
SOT404 (D2-PAK)
mounted on a printed circuit board; minimum
footprint
-
50
-
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03nm82
single shot
0.2
0.1
0.05
0.02
10-3
10-2
10-1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
δ = 0.5
tp
tp
T
P
t
T
δ =


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