BUK9107-55ATE datasheet(6/15 Pages) NXP

No. de pieza	BUK9107-55ATE

Descripción Electrónicos	N-channel TrenchPLUS logic level FET

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BUK9107-55ATE_2

Product data sheet

Rev. 02 — 16 February 2009

6 of 15

NXP Semiconductors

BUK9107-55ATE

N-channel TrenchPLUS logic level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =0.25mA; VGS =0V; Tj =25°C

55

-

V

ID =0.25mA; VGS =0V; Tj =-55 °C

50

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS = VGS; Tj =25°C;

see Figure 9

11.5

2

V

ID =1mA; VDS = VGS; Tj = 175 °C;

see Figure 9

0.5

-

V

ID =1mA; VDS = VGS; Tj =-55 °C;

see Figure 9

--2.3

V

IDSS

drain leakage current

VDS =55V; VGS =0V; Tj =25°C

-

0.1

10

µA

VDS =55V; VGS =0V; Tj = 175 °C

-

250

µA

V(BR)GSS

gate-source breakdown

voltage

IG =-1mA; -55 °C < Tj < 175 °C

12

15

-

V

IG = 1 mA; -55 °C < Tj < 175 °C

12

15

-

V

IGSS

gate leakage current

VDS =0V; VGS =5V; Tj =25°C

-

5

1000

nA

VDS =0V; VGS =-5V; Tj =25°C

-

5

1000

nA

RDSon

drain-source on-state

resistance

VGS =5V; ID =50A; Tj =25°C;

see Figure 7; see Figure 8

-5.8

7

m

Ω

VGS =5V; ID =50A; Tj =175 °C;

see Figure 7; see Figure 8

--14

m

Ω

VGS =4.5 V; ID =50A; Tj =25°C

-

6

7.7

m

Ω

VGS =10V; ID =50A; Tj =25°C

-

5.2

6.2

m

Ω

VF(TSD)

temperature sense

diode forward voltage

IF = 250 µA; Tj = 25 °C

648

658

668

mV

SF(TSD)

temperature sense

diode temperature

coefficient

IF = 250 µA; Tj >-55 °C; Tj < 175 °C

-1.4

-1.54

-1.68

mV/K

VF(TSD)hys

temperature sense

diode forward voltage

hysteresis

IF > 125 µA; IF < 250 µA; Tj =25°C

25

32

50

mV

Dynamic characteristics

QG(tot)

total gate charge

ID =50A; VDS =44V; VGS =5V;

Tj =25°C; see Figure 14

-

108

-

nC

QGS

gate-source charge

-

15

-

nC

QGD

gate-drain charge

-

47

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V; f=1MHz;

Tj =25°C; see Figure 12

-

5836

-

pF

Coss

output capacitance

-

958

-

pF

Crss

reverse transfer

capacitance

-

595

-

pF

td(on)

turn-on delay time

VDS =30V; RL =1.2 Ω; VGS =5V;

RG(ext) =10 Ω; Tj =25 °C

-51

-

ns

tr

rise time

-

202

-

ns

td(off)

turn-off delay time

-

341

-

ns

tf

fall time

-

207

-

ns

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