BUK7505-30A datasheet(2/8 Pages) NXP

No. de pieza	BUK7505-30A

Descripción Electrónicos	TrenchMOS transistor Standard level FET

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK7505-30A

Standard level FET

STATIC CHARACTERISTICS

T

j= 25˚C

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA;

30

-

V

voltage

T

j = -55˚C

27

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

2

3.0

4.0

V

T

j = 175˚C

1

-

V

T

j = -55˚C

-

4.4

V

I

DSS

Zero gate voltage drain current

V

DS = 30 V; VGS = 0 V;

-

0.05

10

µA

T

j = 175˚C

-

500

µA

I

GSS

Gate source leakage current

V

GS = ±20 V; VDS = 0 V

-

2

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 10 V; ID = 25 A

-

4.3

5

m

Ω

resistance

T

j = 175˚C

-

9.3

m

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

4500

6000

pF

C

oss

Output capacitance

-

1500

1800

pF

C

rss

Feedback capacitance

-

960

1300

pF

t

d on

Turn-on delay time

V

DD = 30 V; Rload =1.2Ω;

-

35

55

ns

t

r

Turn-on rise time

V

GS = 10 V; RG = 10 Ω

-

130

200

ns

t

d off

Turn-off delay time

-

155

230

ns

t

f

Turn-off fall time

-

150

220

ns

L

d

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

75

A

current

I

DRM

Pulsed reverse drain current

-

240

A

V

SD

Diode forward voltage

I

F = 25 A; VGS = 0 V

-

0.85

1.2

V

I

F = 75 A; VGS = 0 V

-

1.1

-

V

t

rr

Reverse recovery time

I

F = 75 A; -dIF/dt = 100 A/µs;

-

400

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 30 V

-

1.0

-

µC

September 1999

2

Rev 1.100

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