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STP75N20 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP75N20 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB75N20 - STP75N20 - STW75N20 Electrical characteristics 5/16 Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse with limited by maximum temperature Source-drain current Source-drain current (pulsed) 75 300 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 75A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 75A,VDD = 100V di/dt = 100 A/µs Tj = 25°C (see Figure 20) 222 2.18 19 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 75A, VDD = 100V di/dt = 100 A/µs Tj = 150°C (see Figure 20) 267 3 22 ns µC A |
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