STB270N4F3 datasheet(4/14 Pages) STMICROELECTRONICS

No. de pieza	STB270N4F3

Descripción Electrónicos	N-channel 40 V, 1.6 m廓, 160 A, D2PAK, I2PAK STripFET??III Power MOSFET

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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4 / 14 page

Electrical characteristics

STB270N4F3, STI270N4F3

4/14

Doc ID 13208 Rev 4

2

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS= 0

40

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating

@125 °C

10

100

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20 V

±

200

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

24

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 80 A

I²PAK

2.1

2.6

m

Ω

D²PAK

1.6

2.0

m

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward

transconductance

VDS =15 V, ID = 80 A

-200

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

-

7400

1800

47

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

gate-drain charge

VDD=20 V, ID = 160 A

VGS =10 V

(see Figure 14)

-

110

27

25

150

nC

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

tr

Turn-on delay time

Rise time

VDD=20 V, ID= 80 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

-

22

180

-

ns

td(off)

tf

Turn-off delay time

Fall time

VDD=20 V, ID= 80 A,

RG=4.7 Ω, VGS=10 V

(see Figure 16)

-

110

45

-

ns

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