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STP9NM50N Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STP9NM50N
Descripción Electrónicos  N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP9NM50N Datasheet(HTML) 4 Page - STMicroelectronics

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Obsolete
Product(s)
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Product(s)
Electrical characteristics
STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
500
V
dv/dt(1)
1.
Characteristics value at turn off on inductive load
Drain-source voltage slope
Vdd= 400V, Id=7.5A,
Vgs=10V
35
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc = 125°C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 3.7A
0.47
0.56
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID= 3.7A
5S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50V, f=1MHz, VGS=0
570
46
6
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
characteristics
VGS=0, VDS = 0V to 400V
94
pF
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20mV
Open drain
6
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 400V, ID = 7.5A
VGS =10V
(see Figure 16)
20
4
10
nC
nC
nC


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