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BAT24-02LS Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BAT24-02LS Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2008-08-26 1 BAT24-02LS Silicon Schottky Diode • RF Schottky diode for mixer applications up to 26 GHz • Extremely low inductance combined with ultra low device capacitance • Very stable performance for all major parameters • Package size: 0.62 x 0.31 x 0.31 mm³ only • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAT24-02LS 2 1 Type Package Configuration LS(nH) Marking BAT24-02LS TSSLP-2-1 single, leadless 0.2 ±0.05 S Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 4 V Forward current IF 110 mA Total power dissipation TS ≤ 73 °C Ptot 100 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 770 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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