SPI11N60S5 datasheet(8/12 Pages) INFINEON

No. de pieza	SPI11N60S5

Descripción Electrónicos	Cool MOS??Power Transistor Feature New revolutionary high voltage technology

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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8 / 12 page

200

9-11-30

Rev. 2.

7

Page 8

SPP11N60S5

SPI11N60S5

13 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60

-20

20

60

100

°C

180

Tj

540

560

580

600

620

640

660

680

V

720

SPP11N60S5

14 Avalanche power losses

PAR = f (f )

parameter: EAR=0.6mJ

10

4

10

5

10

6

Hz

f

0

50

100

150

200

W

300

15 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

0

100

200

300

400

V

600

VDS

0

10

1

10

2

10

3

10

4

10

pF

Ciss

Coss

Crss

16 Typ. C

oss stored energy

Eoss=f(VDS)

0

100

200

300

400

V

600

VDS

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

µJ

7.5

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