SMBD914 datasheet(1/6 Pages) INFINEON

No. de pieza	SMBD914

Descripción Electrónicos	Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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2007-03-28

1

SMBD914/MMBD914...

Silicon Switching Diode

• For high-speed switching applications

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

SMBD914/MMBD914

!

Type

Package

Configuration

Marking

SMBD914/MMBD914

SOT23

single

s5D

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

VR

100

V

Peak reverse voltage

VRM

100

Forward current

IF

250

mA

Non-repetitive peak surge forward current

t = 1 µs

t = 1 s

IFSM

4.5

0.5

A

Total power dissipation

TS ≤ 54°C

Ptot

370

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

SMBD914/MMBD914

RthJS

≤ 260

K/W

1Pb-containing package may be available upon special request

2For calculation of RthJA please refer to Application Note Thermal Resistance

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SMBD914 Datasheet(PDF) 1 Page - Infineon Technologies AG

SMBD914 Datasheet(HTML) 1 Page - Infineon Technologies AG

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