IRF7105QPBF_10 datasheet(4/10 Pages) IRF

No. de pieza	IRF7105QPBF

Descripción Electrónicos	HEXFETPOWERMOSFET

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Fabricante Electrónico	IRF [International Rectifier]

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IRF7105QPbF

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Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 11a. Gate Charge Test Circuit

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

VDS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

+

-

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

VDD

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

QG

QGS

QGD

VG

Charge

Fig 11b. Basic Gate Charge Waveform

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10V

N-Channel

VSD , Source-to-Drain Voltage ( V )

VDS , Drain-to-Source Voltage ( V )

TA , Ambient Temperature ( °C )

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