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2N3375 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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2N3375 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 40 V BVCEX VBE = -1.5 V IC = 100 mA 65 V BVCBO IC = 500 µA65 V ICEO VCE = 30 V 100 µµµµA IEBO VEB = 4.0 V 100 µµµµA hFE VCE = 5.0 V IC = 250 mA 10 --- VCE(SAT) IC = 500 mA IB = 100 mA 1.0 V Cob VCB = 30 V f = 1.0 MHz 10 pF ft VCE = 28 V IC = 150 mA f = 100 MHz 500 MHz Pout GP ηηηη VCE = 28 V Pin = 1.0 W f = 400 MHz 3.0 4.8 40 W dB % NPN SILICON RF POWER TRANSISTOR 2N3375 DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. FEATURES INCLUDE: • Isolated Package MAXIMUM RATINGS IC 1.5 A VCE 40 V PDISS 11.6 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC θθθθ JC 15 OC/W PACKAGE STYLE TO- 60(ISOLATED) 1 = EMITTER 2 = BASE 3 = COLLECTOR |
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Descripción similar - 2N3375 |
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