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1N5920B Datasheet(PDF) 1 Page - EIC discrete Semiconductors

No. de pieza 1N5920B
Descripción Electrónicos  SILICON ZENER DIODES
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Fabricante Electrónico  EIC [EIC discrete Semiconductors]
Página de inicio  http://www.eicsemi.com
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1N5920B Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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1N5913B - 1N5957B
SILICON ZENER DIODES
VZ : 3.3 - 240 Volts
PD : 3 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
MAXIMUM RATINGS
Rating at 25
°C ambient temperature unless otherwise specified
Rating
Symbol
Value
Unit
Maximum Steady state Power Dissipation
3.0
W
@ TL = 75 ºC, Lead Length = 3/8"
Derate above 75 ºC
Steady State Power Dissipation
1.0
W
@ TL = 50 ºC, Lead Length = 3/8"
Derate above 50 ºC
Operating and Storage Temperature Range
TJ,TSTG
- 65 to + 200
°C
Page 1 of 4
Rev. 07 : June 7, 2006
6.67
mW/ºC
PD
PD
24
mW/ºC
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.108 (2.74)
0.079 (1.99)
0.205 (5.20)
0.161 (4.10)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
Certificate TH97/10561QM
Certificate TW00/17276EM


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