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1N5920B Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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1N5920B Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 4 page 1N5913B - 1N5957B SILICON ZENER DIODES VZ : 3.3 - 240 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.335 gram MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Symbol Value Unit Maximum Steady state Power Dissipation 3.0 W @ TL = 75 ºC, Lead Length = 3/8" Derate above 75 ºC Steady State Power Dissipation 1.0 W @ TL = 50 ºC, Lead Length = 3/8" Derate above 50 ºC Operating and Storage Temperature Range TJ,TSTG - 65 to + 200 °C Page 1 of 4 Rev. 07 : June 7, 2006 6.67 mW/ºC PD PD 24 mW/ºC DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.108 (2.74) 0.079 (1.99) 0.205 (5.20) 0.161 (4.10) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) Certificate TH97/10561QM Certificate TW00/17276EM |
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