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BFC10 Datasheet(PDF) 2 Page - Seme LAB |
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BFC10 Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page BFC10 Characteristic Test Conditions Min. Typ. Max. Unit Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Test Conditions Min. Typ. Max. Unit 20.5 82 1.8 640 1280 2000 8 16 32 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 IS ISM VSD trr Qrr VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A/µs Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge A V ns µC Characteristic Min. Typ. Max. Unit 3 5 2500 35 13 LD LS VIsolation CIsolation Torque Internal Drain Inductance (Measured From Drain Terminal to Centre of Die) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance f = 1MHz Maximum Torque for Device Mounting Screws and Electrical Terminations nH V pF in–lbs Characteristic Min. Typ. Max. Unit 0.24 0.05 RθJC RθCS Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) °C/W DYNAMIC CHARACTERISTICS SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS PACKAGE CHARACTERISTICS THERMAL CHARACTERISTICS 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380 µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6Ω pF nC ns 5425 6500 710 995 230 350 235 370 24 36 107 160 15 30 15 30 47 75 15 30 LAB SEME CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. |
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