STPS16170CB datasheet(4/10 Pages) STMICROELECTRONICS

No. de pieza	STPS16170CB

Descripción Electrónicos	High voltage power Schottky rectifier

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Characteristics

STPS16170C

4/10

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 8.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

Figure 9.

Forward voltage drop versus

forward current (per diode)

Figure 10.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, Cu = 35 µm - DPAK)

Figure 11.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, Cu = 35 µm - D2PAK)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

0

25

50

75

100

125

150

175

I

R(µA)

T

j=150°C

T

j=125°C

T

j=25°C

T

j=75°C

T

j=175°C

VR(V)

10

100

1000

1

10

100

1000

C(pF)

F=1MHz

V

OSC=30mVRMS

T

j=25°C

VR(V)

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

80.0

90.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

I

FM(A)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)

0

10

20

30

40

50

60

70

80

90

100

0

5

10

15

20

25

30

35

40

R

th(j-a)(°C/W)

DPAK

SCU(cm²)

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

R

th(j-a)(°C/W)

D²PAK

SCU(cm²)

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