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2SA1160 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza 2SA1160
Descripción Electrónicos  Strobe Flash Applications Medium Power Amplifier Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1160 Datasheet(HTML) 2 Page - Toshiba Semiconductor

  2SA1160_09 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1160_09 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1160_09 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1160_09 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SA1160
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −20 V, IE = 0
−100
nA
Emitter cut-off current
IEBO
VEB = −6 V, IC = 0
−100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−10
V
Emitter-base breakdown voltage
V (BR) EBO
IE = −1 mA, IC = 0
−6
V
hFE (1)
(Note 3)
VCE = −1 V, IC = −0.5 A
140
600
DC current gain
hFE (2)
VCE = −1 V, IC = −4 A
60
120
Collector-emitter saturation voltage
VCE (sat)
IC = −2 A, IB = −50 mA
−0.20
−0.50
V
Base-emitter voltage
VBE
VCE = −1 V, IC = −2 A
−0.83
−1.5
V
Transition frequency
fT
VCE = −1 V, IC = −0.5 A
140
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
50
pF
Note 3: hFE (1) Classification A: 140 to 280, B: 200 to 400, C: 300 to 600
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
A1160
Lot No.
Note 4
Characteristics
indicator
Part No. (or abbreviation code)


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