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2SC2459 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC2459 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SC2459 2003-03-27 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications · High breakdown voltage: VCEO = 120 V (max) · High DC current gain: hFE = 200~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF = 1dB (typ.), 10dB (max) · Complementary to 2SA1049. · Small package. Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ¾ ¾ 0.1 mA DC current gain hFE (Note) VCE = 6 V, IC = 2 mA 200 ¾ 700 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ¾ ¾ 0.3 V Transition frequency fT VCE = 6 V, IC = 1 mA ¾ 100 ¾ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 3.0 ¾ pF Noise figure NF VCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 kW ¾ 1.0 10 dB Note: hFE classification GR: 200~400, BL: 350~700 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) |
Número de pieza similar - 2SC2459_03 |
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Descripción similar - 2SC2459_03 |
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