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2SC3072_05 Datasheet(Hoja de datos) 2 Page - Toshiba Semiconductor

No. de Pieza. 2SC3072_05
Descripción  Strobe Flash Applications Medium Power Amplifier Applications
Descarga  4 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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2SC3072
2005-02-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
hFE (1)
(Note 2)
VCE = 2 V, IC = 0.5 A
140
450
DC current gain
hFE (2)
VCE = 2 V, IC = 4 A
70
Collector emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.1 A
1.0
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 A
1.5
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
40
pF
Note 2: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450
Marking
C3072
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)




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