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2SC3074 Datasheet(Hoja de datos) 4 Page - Toshiba Semiconductor

No. de Pieza. 2SC3074
Descripción  High Current Switching Applications
Descarga  5 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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 4 page
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2SC3074
2005-02-01
4
PC – Ta
VBE (sat) – IC
IC – VBE
Collector current IC (A)
Base-emitter voltage VBE (V)
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
0.1
0.03
Common emitter
IC/IB = 20
25
100
Tc = −55°C
10
0.1
0.3
1
3
10
0.3
0.5
1
3
5
0
0
Common emitter
VCE = 1 V
5
4
3
2
1
0.4
0.8
1.2
1.6
2.4
2.0
25
−55
Tc = 100°C
28
0
0
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
20
40
60
80
100
120
160
4
8
12
16
20
(1)
(2)
(3)
24
140
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
10
IC max (continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
DC operation
Tc = 25°C
30
100
3
10
0.3
1
1
0.03
0.05
0.1
0.3
0.5
5
3




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