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2SC3266 Datasheet(Hoja de datos) 1 Page - Toshiba Semiconductor

No. de Pieza. 2SC3266
Descripción  Power Amplifier Applications Power Switching Applications
Descarga  3 Pages
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Fabricante  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
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2SC3266
2003-03-25
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3266
Power Amplifier Applications
Power Switching Applications
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A)
· Complementary to 2SA1296
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
¾
¾
0.1
mA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
¾
¾
0.1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
¾
¾
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 0.1 mA, IC = 0
6
¾
¾
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.1 A
120
¾
700
DC current gain
hFE (2)
VCE = 2 V, IC = 2 A
75
¾
¾
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.1 A
¾
¾
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.1 A
¾
¾
0.85
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
¾
120
¾
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
¾
30
¾
pF
Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)




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