2N7002W-7-F datasheet(1/3 Pages) DIODES

No. de pieza	2N7002W-7-F

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Fabricante Electrónico	DIODES [Diodes Incorporated]

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2N7002W

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Low-On Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Ultra-Small Surface Mount Package

•

Lead Free/RoHS Compliant (Note 2)

Mechanical Data

•

Case: SOT-323

•

Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.006 grams (approximate)

SOT-323

TOP VIEW

Equivalent Circuit

Source

Gate

Drain

GS

D

TOP VIEW

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage RGS ≤ 1.0MΩ

VDGR

60

V

Gain-Source Voltage

Continuous

Pulsed

VGSS

±20

±40

V

Drain Current (Note 1)

Continuous

Continuous @ 100

°C

Pulsed

ID

115

73

800

mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

Derating above TA = 25°C

PD

200

1.60

mW

Thermal Resistance, Junction to Ambient

RθJA

625

°C /W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

2N7002W

Document number: DS30099 Rev. 14 - 2

1 of 3

www.diodes.com

August 2008

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