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DMP3030SN_0711 Datasheet(Hoja de datos) 1 Page - Diodes Incorporated

No. de Pieza. DMP3030SN_0711
Descripción  P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP3030SN
Document number: DS30787 Rev. 3 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated
DMP3030SN
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SC-59
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish
⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
SC-59
D
G
S
ESD protected
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 1) Steady State
ID
-0.7
A
Pulsed Drain Current (Note 3)
IDM
-2.8
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 1)
Pd
500
mW
Thermal Resistance, Junction to Ambient
RθJA
250
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250mA
Zero Gate Voltage Drain Current
IDSS
-10
μA
VDS = -30V, VGS = 0V
Gate-Body Leakage
IGSS
±10
μA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
-1.0
-3.0
V
VDS = -10V, ID = -1.0mA
Static Drain-Source On-Resistance
RDS (ON)
0.20
0.35
0.25
0.45
Ω
VGS = -10V, ID = -0.4A
VGS = -4.5V, ID = -0.4A
Forward Transfer Admittance
|Yfs|
1
S
VDS = -10V, ID = 0.4A
Diode Forward Voltage (Note 5)
VSD
-0.8
-1.1
V
VGS = 0V, IS = -0.7A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
160
pF
Output Capacitance
Coss
120
pF
Reverse Transfer Capacitance
Crss
50
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
ns
Turn-Off Delay Time
tD(OFF)
25
ns
Turn-On Rise Time
tr
25
ns
Turn-Off Fall Time
tf
40
ns
VDD = -10V, ID = -0.4A,
VGS = -5.0V, RGEN = 50Ω
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.




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