Motor de Búsqueda de Datasheet de Componentes Electrónicos
Selected language     Spanish  ▼
Nombre de pieza
         Descripción


DMP57D5UFB-7 Datasheet(Hoja de datos) 1 Page - Diodes Incorporated

No. de Pieza. DMP57D5UFB-7
Descripción  P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Descarga  4 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo 

   
 1 page
background image
DMP57D5UFB
Document number: DS31274 Rev. 3 - 2
1 of 4
www.diodes.com
March 2008
© Diodes Incorporated
DMP57D5UFB
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance:
RDS(ON) ≤ 6Ω @ VGS = -4.0V
RDS(ON) ≤ 8Ω @ VGS = -2.5V
Very Low Gate Threshold Voltage,
≤ 1.0V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate, 1KV
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.001 grams (approximate)
DFN1006-3
Source
Gate
Protection
Diode
Gate
Drain
Body
Diode
D
S
G
ESD PROTECTED TO 1kV
BOTTOM VIEW
TOP VIEW
Internal Schematic
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-50
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 1)
Steady
TA = 25°C
ID
-200
mA
Pulsed Drain Current (Note 3)
IDM
-700
mA
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 1)
PD
425
mW
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
RθJA
294
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
-50
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
-10
μA
VDS = -50V, VGS = 0V
Gate-Source Leakage
IGSS
±500
nA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
-0.7
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
4.6
6
6
8
Ω
VGS = -4.0V, ID = -100mA
VGS = -2.5V, ID = -80mA
Forward Transfer Admittance
|Yfs|
100
mS
VDS = -5V, ID = -100mA
Diode Forward Voltage (Note 5)
VSD
-1.2
V
VGS = 0V, IS = -100mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
29
pF
Output Capacitance
Coss
7.3
pF
Reverse Transfer Capacitance
Crss
2.5
pF
VDS = -4V, VGS = 0V
f = 1.0MHz
Notes:
1.
Device mounted on FR-4 PCB. t
≤5 sec.
2.
No purposefully added lead.
3.
Pulse width
≤10μS, Duty Cycle ≤1%.
4.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5.
Short duration pulse test used to minimize self-heating effect.
Please click here to visit our online spice models database.




Html Pages

1  2  3  4 


Datasheet Download




Enlace URL

¿ALLDATASHEET es útil para Ud.?  [ DONATE ]  

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Favorito   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl