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DMP3098L Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP3098L Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  DMP3098L Document number: DS31447 Rev. 5 - 2 2 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP3098L Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1.0 -1.8 -2.1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 56 98 70 120 m Ω VGS = -10V, ID = -3.8A VGS = -4.5V, ID = -3.0A Forward Transfer Admittance |Yfs| ⎯ 3.6 ⎯ S VDS = -5V, ID = -2.7A Diode Forward Voltage (Note 5) VSD ⎯ ⎯ -1.26 V VGS = 0V, IS = -2.7A DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Ciss ⎯ 336 1008 pF VDS = -25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss ⎯ 70 210 pF Reverse Transfer Capacitance Crss ⎯ 49 147 pF Gate Resistance RG ⎯ 4.6 ⎯ Ω VGS = 0V VDS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 6) Total Gate Charge Qg ⎯ 4.0 8.0 nC VDS = -15V, VGS = -4.5V, ID = -3.8A ⎯ 7.8 ⎯ VDS = -15V, VGS = -10V, ID = -3.8A Gate-Source Charge Qgs ⎯ 1.0 ⎯ Gate-Drain Charge Qgd ⎯ 2.5 ⎯ Turn-On Delay Time td(on) ⎯ 6.0 12.0 ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω Rise Time tr ⎯ 5.0 10.0 Turn-Off Delay Time td(off) ⎯ 17.6 35.2 Fall Time tf ⎯ 9.5 19.0 Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. Fig. 1 Typical Output Characteristics -V , DRAIN-SOURCE VOLTAGE (V) DS 0 4 8 12 16 20 0 123 4 5 V = -2.5V GS V = -4.5V GS V = -10V GS V = -1.5V GS V = -3.0V GS Fig. 2 Typical Transfer Characteristics -V , GATE SOURCE VOLTAGE (V) GS 0 4 8 12 16 20 12 3 4 5 6 V = -5V DS T = -55°C A T = 25°C A T = 125°C A T = 150°C A |
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