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DMN3112SSS-13 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN3112SSS-13 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 4 page DMN3112SSS Document number: DS31582 Rev. 1 - 2 1 of 4 www.diodes.com October 2008 © Diodes Incorporated DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 57m Ω @ VGS = 10V • 112m Ω @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOP-8L • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.072g (approximate) SOP-8L S D D G D D S S Internal Schematic TOP VIEW TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Steady State TA = 25°C TA = 70°C ID 6 4.5 A Pulsed Drain Current (Note 3) IDM 24 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 2.5 W Thermal Resistance, Junction to Ambient RθJA 50 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 800 nA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ⎯ ⎯ ±80 ±800 nA VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1 ⎯ 2.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) ⎯ 43 83 57 112 m Ω VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 3.7A Forward Transconductance gfs ⎯ 2.8 ⎯ S VDS = 10V, ID = 3.7A Diode Forward Voltage (Note 5) VSD 0.5 0.8 1.2 V VGS = 0V, IS = 2.1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 268 ⎯ pF Output Capacitance Coss ⎯ 73 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 50 ⎯ pF VDS = 15V, VGS = 0V f = 1.0MHz Notes: 1. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. Please click here to visit our online spice models database. |
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