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DMN3112SSS-13 Datasheet(PDF) 1 Page - Diodes Incorporated

No. de pieza DMN3112SSS-13
Descripción Electrónicos  SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
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Fabricante Electrónico  DIODES [Diodes Incorporated]
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DMN3112SSS-13 Datasheet(HTML) 1 Page - Diodes Incorporated

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DMN3112SSS
Document number: DS31582 Rev. 1 - 2
1 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DMN3112SSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
57m
Ω @ VGS = 10V
112m
Ω @ VGS = 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
SOP-8L
S
D
D
G
D
D
S
S
Internal Schematic
TOP VIEW
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 1)
Steady
State
TA = 25°C
TA = 70°C
ID
6
4.5
A
Pulsed Drain Current (Note 3)
IDM
24
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 1)
PD
2.5
W
Thermal Resistance, Junction to Ambient
RθJA
50
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
30
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
800
nA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
±80
±800
nA
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
1
2.2
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
43
83
57
112
m
Ω
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 3.7A
Forward Transconductance
gfs
2.8
S
VDS = 10V, ID = 3.7A
Diode Forward Voltage (Note 5)
VSD
0.5
0.8
1.2
V
VGS = 0V, IS = 2.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
268
pF
Output Capacitance
Coss
73
pF
Reverse Transfer Capacitance
Crss
50
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Notes:
1. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W.
2. No purposefully added lead.
3. Pulse width
≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
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