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2SC1008 Datasheet(PDF) 1 Page - Weitron Technology |
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2SC1008 Datasheet(HTML) 1 Page - Weitron Technology |
1 / 3 page WEITRON hpp://www.weitron.com.tw 1/3 15-Feb-2011 NPN Plastic-Encapsulate Transistor TO-92 2SC1008 WEITRON Lead(Pb)-Free P b 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified) Parameter Symbol Test conditions MIN Units MAX TYP CLASSIFICATION OF hFE Collector Current Power Dissipation Junction Temperature Storage Temperature VCBO ICM PCM TJ Tstg 80 0.7 0.8 -55 to +150 -55 to +150 V A W °C °C Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency DC current gain V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) f T IC=500mA, IB= 50mA IC=500mA, IB= 50mA VCE=10V,IC=50mA IC= 100µA, IE=0 VCE= 2V, IC= 50mA VEB= 5V, IC=0 VCB= 60V, IE=0 IE= 10µA, IC=0 IC= 10mA, IB=0 80 60 8 0.1 0.1 400 0.4 1.1 30 40 V V V µA µA V V MHz G Y O R Rank Range 40-80 200-400 120-240 70-140 |
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