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2SC4881 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza 2SC4881
Descripción Electrónicos  High-Current Switching Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC4881 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC4881
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4881
High-Current Switching Applications
• Low saturation voltage: VCE (sat) = 0.4 V (max)
• High-speed switching: tstg = 0.8 µs (typ.)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
DC
IC
5
Collector current
Pulse
ICP
8
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
1
µA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
1
µA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 1 V, IC = 1 A
100
320
DC current gain
hFE (2)
VCE = 1 V, IC = 2.5 A
60
Collector-emitter saturation voltage
VCE (sat)
IC = 2.5 A, IB = 125 mA
0.25
0.4
V
Base-emitter saturation voltage
VBE (sat)
IC = 2.5 A, IB = 125 mA
1.0
1.3
V
Transition frequency
fT
VCB = 4 V, IC = 1 A
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
45
pF
Turn-on time
ton
0.1
Storage time
tstg
0.8
Switching time
Fall time
tf
IB1 = −IB2 = 125 mA, duty cycle ≤ 1%
0.1
µs
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
20 µs
VCC = 30 V
Output
IB2
IB1
Input


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