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2SC5548 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza 2SC5548
Descripción Electrónicos  High Voltage Switching Applications
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5548 Datasheet(HTML) 2 Page - Toshiba Semiconductor

  2SC5548_05 Datasheet HTML 1Page - Toshiba Semiconductor 2SC5548_05 Datasheet HTML 2Page - Toshiba Semiconductor 2SC5548_05 Datasheet HTML 3Page - Toshiba Semiconductor 2SC5548_05 Datasheet HTML 4Page - Toshiba Semiconductor 2SC5548_05 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC5548
2005-02-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 480 V, IE = 0
20
µA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
10
µA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
600
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
370
V
hFE (1)
VCE = 5 V, IC = 1 mA
50
120
DC current gain
hFE (2)
VCE = 5 V, IC = 0.2 A
60
120
Collector emitter saturation voltage
VCE (sat)
IC = 0.8 A, IB = 0.1 A
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.8 A, IB = 0.1 A
1.3
V
Rise time
tr
0.5
Storage time
tstg
3.0
Switching time
Fall time
tf
IB1 = 0.1 A, IB2 = −0.2 A
DUTY CYCLE ≤ 1%
0.3
µs
Marking
C5548
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
20 µs
VCC ≈ 200 V
INPUT
OUT-
PUT
IB21
IB1
IB2
IC


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