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2SC5548 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC5548 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC5548 2005-02-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0 ― ― 20 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 370 ― ― V hFE (1) VCE = 5 V, IC = 1 mA 50 ― 120 DC current gain hFE (2) VCE = 5 V, IC = 0.2 A 60 ― 120 Collector emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.3 V Rise time tr ― ― 0.5 Storage time tstg ― ― 3.0 Switching time Fall time tf IB1 = 0.1 A, IB2 = −0.2 A DUTY CYCLE ≤ 1% ― ― 0.3 µs Marking C5548 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 20 µs VCC ≈ 200 V INPUT OUT- PUT IB21 IB1 IB2 IC |
Número de pieza similar - 2SC5548_05 |
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Descripción similar - 2SC5548_05 |
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