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2N3811U Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N3811U Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 3 page TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 T4-LDS-0118 Rev. 1 (091095) Page 2 of 3 ELECTRICAL CHARACTERISTICS (con’t) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS Forward-Current Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc 2N3810, 2N3810L , 2N3810U hFE 100 150 150 125 450 450 IC = 1.0μAdc, VCE = 5.0Vdc IC = 10μAdc, VCE = 5.0Vdc IC = 100μAdc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc 2N3811, 2N3811L, 2N3811U hFE 75 225 300 300 250 900 900 Collector-Emitter Saturation Voltage IC = 100μAdc, IB = 10μAdc IC = 1.0mAdc, IB = 100μAdc VCE(sat) 0.2 0.25 Vdc Base-Emitter Saturation Voltage IC = 100μAdc, IB = 10μAdc IC = 1.0mAdc, IB = 100μAdc VBE(sat) 0.7 0.8 Vdc Base-Emitter Non-Saturation Voltage VCE = 5.0Adc, IC = 100μAdc VBE 0.7 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz IC = 1.0mAdc, VCE = 5.0Vdc, f = 100MHz |hfe| 1.0 1.0 5.0 Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U hfe 150 300 600 900 Small-Signal Short Circuit Input Impedance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U hje 3.0 3.0 30 40 k Ω Small-Signal Short Circuit Output Admittance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3810, 2N3810L , 2N3810U 2N3811, 2N3811L , 2N3811U hoe 5.0 60 μmhos Output Capacitance VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 5.0 pF Input Capacitance VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz CIbo 8.0 pF |
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