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CSD-4M Datasheet(Hoja de datos) 1 Page - Central Semiconductor Corp

No. de Pieza. CSD-4M
Descripción  SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 600 THRU 800 VOLTS
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Fabricante  CENTRAL [Central Semiconductor Corp]
Página de inicio  http://www.centralsemi.com
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CSD-4M
CSD-4N
SURFACE MOUNT
SILICON CONTROLLED RECTIFIER
4 AMP, 600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSD-4M series
type is an Epoxy Molded Silicon Controlled Rectifier
designed for sensing circuit applications and control
systems.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
CSD-4M
CSD-4N UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
600
800
V
RMS On-State Current (TC=85°C)
IT(RMS)
4.0
A
Peak One Cycle Surge Current, t=10ms
ITSM
30
A
I2t Value for Fusing, t=10ms
I2t
4.5
A2s
Peak Gate Power, tp=20μs
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current, tp=20μs
IGM
1.2
A
Critical Rate of Rise of On-State Current
di/dt
50
A/μs
Operating Junction Temperature
TJ
-40 to +125
°C
Storage Temperature
Tstg
-40 to +150
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
Rated VDRM, VRRM, RGK=1KΩ
10
μA
IDRM, IRRM
Rated VDRM, VRRM, RGK=1KΩ, TC=125°C
200
μA
IGT
VD=12V, RL=10Ω
20
38
200
μA
IH
IT=50mA, RGK=1KΩ
0.25
2.0
mA
VGT
VD=12V, RL=10Ω
0.55
0.8
V
VTM
ITM=8.0A, tp=380μs
1.6
1.8
V
dv/dt
VD=2/3 VDRM, RGK=1KΩ, TC=125°C
10
V/μs
DPAK THYRISTOR CASE
R1 (12-February 2010)
www.centra lsemi.com




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