74AHC1G00

SINGLE 2 INPUT POSITIVE NAND GATE

74AHC1G00

Document number: DS35169 Rev. 1- 2

4 of 8

www.diodes.com

March 2011

© Diodes Incorporated

Electrical Characteristics

Symbol

Parameter

Test Conditions

25ºC

-40ºC to 85ºC

-40ºC to 125ºC

Unit

Min

Typ.

Max

Min

Max

Min

Max

High Level

Output Voltage

2V

1.9

2

1.9

1.9

V

3V

2.9

3

2.9

2.9

4.5V

4.4

4.5

4.4

4.4

3V

2.58

2.48

2.40

4.5V

3.94

3.8

3.70

Low Level

Output Voltage

2V

0.1

0.1

0.1

V

3V

0.1

0.1

0.1

4.5V

0.1

0.1

0.1

3V

0.36

0.44

0.55

4.5V

0.36

0.44

0.55

Input Current

± 0.1

± 1

± 2

μA

Supply Current

5.5V

1

10

40

μA

Input

Capacitance

GND

5.5V

2.0

10

10

10

pF

Thermal

Resistance

Junction-to-

Ambient

SOT25

(Note 4)

195

SOT353

430

Thermal

Resistance

Junction-to-

Case

SOT25

(Note 4)

58

SOT353

155

Notes:

4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

Switching Characteristics

Parameter

From

(Input)

TO

(OUTPUT)

25ºC

-40ºC to 85ºC

-40ºC to 125ºC

Unit

Min

Typ.

Max

Min

Max

Min

Max

A or B

Y

0.6

4.5

7.9

0.6

9.5

0.6

10.5

ns

0.6

6.5

11.4

0.6

13.0

0.6

14.5

ns

Parameter

From

(Input)

TO

(OUTPUT)

25ºC

-40ºC to 85ºC

-40ºC to 125ºC

Unit

Min

Typ.

Max

Min

Max

Min

Max

A or B

Y

0.6

3.5

5.5

0.6

6.5

0.6

7.0

ns

0.6

4.9

7.5

0.6

8.5

0.6

9.5

ns