74AHC1G125

SINGLE BUFFER GATE WITH 3-STATE OUTPUT

74AHC1G125

Document number: DS35176 Rev. 1 - 2

3 of 9

www.diodes.com

March 2011

© Diodes Incorporated

Symbol

Description

Rating

Unit

ESD HBM

Human Body Model ESD Protection

2

KV

ESD CDM

Charged Device Model ESD Protection

1

KV

ESD MM

Machine Model ESD Protection

200

V

Supply Voltage Range

-0.5 to 6.5

V

Input Voltage Range

-0.5 to 6.5

V

Voltage applied to output in high or low state

V

-20

mA

±20

mA

±25

mA

50

mA

Continuous current through GND

-50

mA

Operating Junction Temperature

-40 to 150

°C

Storage Temperature

-65 to 150

°C

Notes:

2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be

within recommend values.

Symbol

Parameter

Min

Max

Unit

Operating Voltage

2

5.5

V

High-level Input Voltage

1.5

V

2.1

3.85

Low-level input voltage

0.5

V

0.9

1.65

Input Voltage

0

5.5

V

Output Voltage

0

V

High-level output current

-50

uA

-4

mA

-8

Low-level output current

50

uA

4

mA

8

Δt/ΔV

Input transition rise or fall

rate

100

ns/V

20

Operating free-air

temperature

-40

125

ºC

Notes: