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AML2002 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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AML2002 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page  AML2002 No. A1837-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=100V, IE=0A 1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 μA DC Current Gain hFE VCE=5V, IC=100mA 200 560 Gain-Bandwidth Product fT VCE=10V, IC=100mA 120 MHz Output Capacitance Cob VCB=10V, f=1MHz 9 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=0.35A, IB=35mA 125 220 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=0.35A, IB=35mA 0.82 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 220 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 200 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 8 V Turn-On Time ton See specified Test Circuit. 50 ns Storage Time tstg See specified Test Circuit. 2 μs Fall Time tf See specified Test Circuit. 70 ns Switching Time Test Circuit RB VCC=100V IC=10IB1= --10IB2=0.3A + 50Ω INPUT OUTPUT RL 820μF PW=50μs IB1 D.C.≤1% IB2 IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V IC -- VCE hFE -- IC IC -- VBE Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A IT15964 0 1.0 0.2 0.1 0.4 0.3 0.6 0.5 0.8 0.9 0.7 0 0.1 0.7 0.6 0.5 0.4 0.3 0.2 0.8 0.9 1.0 IB=0mA 2mA 4mA 6mA 8mA 10mA 20mA 30mA 40mA 50mA 60mA 80mA IT15965 010 1 456789 3 2 0 0.02 0.14 0.12 0.10 0.08 0.06 0.04 0.16 0.18 0.20 IB=0μA 200 μA 100 μA 300 μA 400 μA 500 μA 100mA 600 μA 700 μA IT15967 2 10 100 1.0 3 5 7 2 3 5 7 1000 2 3 5 7 0.01 3 25 0.1 1.0 73 25 7 Ta=75 °C 25 °C VCE=5V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 IT15966 0.4 0.3 0.1 0.2 0.9 0.8 0.7 0.6 0.5 1.0 VCE=5V --25 °C |
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