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1N60AG-x-T92-K Datasheet(PDF) 2 Page - Unisonic Technologies |
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1N60AG-x-T92-K Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 1N60A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-091,E ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT 1N60A-A 600 V Drain-Source Voltage 1N60A-B VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 0.5 A Pulsed Drain Current (Note 2) IDM 2 A Single Pulse(Note 3) EAS 50 mJ Avalanche Energy Repetitive(Note 2) EAR 3.6 4.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) 3 W Derate above 25°C PD 25 mW/°C Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C 4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient θJA 120 °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 1N60A-A 600 V Drain-Source Breakdown Voltage 1N60A-B BVDSS VGS = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Forward VGS = 20V, VDS = 0V 100 nA Gate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △ BVDSS/T △ J ID = 250μA referenced to 25°C 0.4 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.2 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 0.5A 11 15 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 100 pF Output Capacitance COSS 20 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0V, f=1MHz 3 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) 12 34 ns Turn-On Rise Time tR 11 32 ns Turn-Off Delay Time tD (OFF) 40 90 ns Turn-Off Fall Time tF VDD=300V, ID=0.5A, RG=5Ω (Note 1,2) 18 46 ns Total Gate Charge QG 8 10 nC Gate-Source Charge QGS 1.8 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=0.8A (Note 1,2) 4.0 nC |
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