2N7002W

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-537.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

60

V

Continuous

±20

Gate Source Voltage

Non Repetitive(tp<50

μs)

±40

V

Continuous

300

Drain Current

Pulsed

800

mA

Power Dissipation

Derated Above 25

°C

200

1.6

mW

mW/

°C

Junction Temperature

+ 150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

625 (Note1)

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

μA

100

nA

Gate-Source Leakage Current

-100

nA

ON CHARACTERISTICS

(Note2)

Gate Threshold Voltage

1

2.1

2.5

V

0.6

3.75

Drain-Source On-Voltage

0.09

1.5

V

On-State Drain Current

500

2700

mA

13.5

Ω

Static Drain-Source On-Resistance

7.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

20

50

pF

Output Capacitance

11

25

pF

Reverse Transfer Capacitance

4

5

pF

Turn-On Time

20

nS

Turn-Off Time

20

nS

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

0.88

1.5

V

Maximum Pulsed Drain-Source Diode

Forward Current

0.8

A

Maximum Continuous Drain-Source

Diode Forward Current

Is

115

mA

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%